RUF015N02 ROHM Co. Ltd., RUF015N02 Datasheet - Page 2
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RUF015N02
Manufacturer Part Number
RUF015N02
Description
1.8v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet
1.RUF015N02.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RUF015N02
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
RUF015N02 TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
RUF015N02(N)
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
RUF015N02TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
Q
V
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.3
1.6
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
130
170
220
110
1.8
0.3
0.3
18
15
20
−
−
−
−
−
5
5
3
−
Max.
Max.
180
240
310
1.0
2.5
1.2
10
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
= 1mA, V
= 1.5A, V
= 1.5A, V
= 0.8A, V
= 1.0A
L
G
= 1.5A
= 0.6A, V
=10Ω
=10Ω
=10V, V
= 20V, V
= 10V, I
= 10V, I
= 10V
=0V
= 4.5V
= 4.5V
10V
10 V
Conditions
Conditions
GS
GS
GS
GS
GS
D
D
DS
GS
= 1mA
= 1.5A
=0V
=0V
= 4.5V
= 2.5V
= 1.8V
=0V
=0V
RUF015N02
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