RUF015N02 ROHM Co. Ltd., RUF015N02 Datasheet
RUF015N02
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RUF015N02 Summary of contents
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... DSS V 10 GSS ±1 ∗1 ±3 0.6 S ∗1 I 2.4 SP ∗2 P 0.8 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 156 RUF015N02 Abbreviated symbol : PS (3) ∗2 (1) ∗1 (2) (1) Gate (2) Source (3) Drain Unit °C °C Unit °C/W 1/3 ...
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... R =10Ω L − − ∗ =10Ω G ∗ − 1.8 2 10V DD ∗ − − 0 4.5V GS ∗ − − 0 1.5A D Min. Typ. Max. Unit − − 1 0.6A RUF015N02 Conditions =0V DS = 1mA Conditions =0V GS 2/3 ...
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... Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage 1000 V GS Ta=125°C Pulsed 75°C 25°C −25°C 100 10 0.01 0 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) RUF015N02 5 Ta=25°C =10V V =10V DD =4.5V I =1.5A D =10Ω =10Ω G Pulsed 0.0 0.2 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...