RJK5020DPK Renesas Electronics Corporation., RJK5020DPK Datasheet - Page 4

• Manufacturer Part Number: RJK5020DPK
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK5020DPK
Rev.2.00 Dec 19, 2006 page 4 of 6
1000
500
200
100
800
600
400
200
50
20
10
5
2
1
5
4
3
2
1
0
0
-25
1
V
V
Reverse Drain Current
I
DS
D
DS
Dynamic Input Characteristics
Gate to Source Cutoff Voltage
Case Temperature
= 40 A
Body-Drain Diode Reverse
0
3
= 10 V
Gate Charge
40
vs. Case Temperature
25
V
Recovery Time
DD
10
V
DD
= 100 V
80
50
250 V
400 V
= 400 V
di / dt = 100 A / µs
V
30
GS
250 V
100 V
75
= 0, Ta = 25°C
120
I
Qg (nC)
D
0.1 mA
100
= 10 mA
100
Tc (°C)
V
I
160
DR
GS
300
125
1 mA
(A)
1000
200
150
16
12
8
4
0
100000
30000
10000
3000
1000
300
100
10
50
20
30
30
10
40
0
0
Drain to Source Voltage
Source to Drain Voltage
5, 10 V
Reverse Drain Current vs.
0.4
Drain to Source Voltage
Source to Drain Voltage
Typical Capacitance vs.
100
0.8
V
GS
1.2
= 0, -5 V
200
Coss
Crss
Ciss
Pulse Test
V
f = 1 MHz
GS
1.6
V
V
DS
SD
= 0
(V)
(V)
300
2.0