RJK5020DPK Renesas Electronics Corporation., RJK5020DPK Datasheet - Page 3

• Manufacturer Part Number: RJK5020DPK
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK5020DPK
Main Characteristics
Rev.2.00 Dec 19, 2006 page 3 of 6
0.05
0.02
0.01
400
300
200
100
Static Drain to Source on State Resistance
0.5
0.2
0.1
50
40
30
20
10
1
0
0
1
Drain to Source Voltage
V
7 V
Power vs. Temperature Derating
GS
10 V
Typical Output Characteristics
Case Temperature
= 10 V
3
Drain Current
4
50
vs. Drain Current
10
8
5.7 V
100
30
12
100
I
D
5.5 V
Tc (°C)
Pulse Test
Pulse Test
150
(A)
V
16
300
DS
5.3 V
(V)
1000
200
20
1000
0.03
0.01
100
300
100
0.5
0.2
0.1
0.3
0.1
Static Drain to Source on State Resistance
50
20
10
0.5
0.4
0.3
0.2
0.1
30
10
5
2
1
3
1
0
−25
0
1
Operation in this
area is limited by
R
Drain to Source Voltage
Ta = 25°C
Gate to Source Voltage
V
V
Pulse Test
DS(on)
Typical Transfer Characteristics
Tc = 75°C
GS
Maximum Safe Operation Area
DS
Case Temperature
0
3
= 10 V
= 10 V
2
25
PW = 10 ms
(1shot)
vs. Temperature
10
4
50
DC Operation
(Tc = 25°C)
30
25°C
−25°C
75
6
20 A
100
10 A
I
D
100 125 150
Pulse Test
Tc (°C)
= 40 A
V
V
300
8
GS
DS
(V)
(V)
1000
10