BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 2

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07305
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Rev. 01 — 25 August 2000
Conditions
T
T
T
V
V
Conditions
T
T
T
Figure 2
T
T
Figure 3
T
T
T
j
sp
sp
j
j
sp
sp
sp
sp
sp
sp
GS
GS
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 4.5 V; I
and
N-channel enhancement mode field-effect transistor
Figure 1
D
3
D
GS
GS
= 500 mA
= 75 mA
GS
= 10 V
= 10 V;
= 10 V;
GS
p
p
= 20 k
10 s;
10 s
Figure 2
Typ
2.8
3.8
Min
65
65
© Philips Electronics N.V. 2000. All rights reserved.
Max
60
300
0.83
150
5
5.3
Max
60
60
300
190
1.2
0.83
+150
+150
300
1.2
BSH112
15
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
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