BSH111-02 NXP Semiconductors, BSH111-02 Datasheet - Page 5

• Manufacturer Part Number: BSH111-02
• Description: Bsh111 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09629
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
DSS
GSS
on
off
j
fs
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
Conditions
I
Figure 9
V
V
V
Figure 7
V
Figure 7
V
Figure 7
V
Figure 11
I
V
V
f = 1 MHz;
V
V
R
D
D
D
DS
GS
GS
GS
GS
DS
GS
GS
DD
GS
GS
T
T
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 0.5 A; V
j
j
j
j
j
j
j
j
j
j
j
= 44 V; V
= 10 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 8 V; V
= 2.5 V; I
= 25 C
= 150 C
= 4.5 V; I
= 25 C
= 1.8 V; I
= 25 C
= 8 V;
= 0 V; V
= 50 V; R
= 10 V; R
= 50
Rev. 02 — 26 April 2002
and
and
and
Figure 12
Figure 14
DS
DS
DS
D
GS
8
8
8
D
D
D
GS
DS
D
G
= 200 mA;
= V
= 75 mA;
= 500 mA;
= 75 mA;
= 44 V;
= 10 V;
= 250 ;
= 50 ;
= 0 V
= 0 V
= 0 V
N-channel enhancement mode field-effect transistor
GS
;
Min
55
50
0.4
0.3
-
-
-
-
-
-
-
-
100
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
75
-
1.0
-
-
0.01
-
10
2.4
-
2.3
3.1
380
1.0
0.05
0.5
17
7
4
4
11
Max
-
-
1.3
-
2.5
1.0
10
100
5
7.4
4
8
-
-
-
-
40
30
10
10
15
BSH111
Unit
V
V
V
V
V
nA
mS
nC
nC
nC
pF
pF
pF
ns
ns
5 of 13
A
A