BSH102 NXP Semiconductors, BSH102 Datasheet - Page 2

• Manufacturer Part Number: BSH102
• Description: N-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
QUICK REFERENCE DATA
1997 Dec 08
V
V
V
V
I
R
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
Power management
DC to DC converters
Battery powered applications
‘Glue-logic’; interface between logic blocks and/or
periphery
General purpose switch.
DS
SD
GS
GSth
tot
DSon
N-channel enhancement mode
MOS transistor
SYMBOL
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
PARAMETER
CAUTION
V
V
T
V
T
2
s
s
GD
DS
GS
PINNING - SOT23
= 80 C
= 80 C
handbook, halfpage
= V
CONDITIONS
= 0; I
= 10 V; I
GS
PIN
Top view
1
2
3
S
; I
= 0.5 A
D
Fig.1 Simplified outline and symbol.
D
= 1 mA
1
= 0.5 A
SYMBOL
3
g
s
d
1
MIN.
2
gate
source
drain
MAM273
Product specification
30
1
0.85
0.4
0.5
20
DESCRIPTION
g
MAX.
BSH102
d
s
V
V
V
V
A
W
UNIT