SIHFU9012 Vishay, SIHFU9012 Datasheet - Page 2
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SIHFU9012
Manufacturer Part Number
SIHFU9012
Description
Power Mosfet
Manufacturer
Vishay
Datasheet
1.SIHFU9012.pdf
(8 pages)
IRFR9012, IRFU9012, SiHFR9012, SiHFU9012
Vishay Siliconix
Note
a. Mounting pad must cover heatsink surface area.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
J
a
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
R
V
t
t
R
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
L
SM
I
t
t
on
thCS
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
V
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact.
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
DS
GS
GS
J
(Independent operating temperature)
= 25 °C, I
T
= 0.8 x max. rating, V
= - 10 V
= - 10 V
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
G
= 25 °C, I
V
MIN.
= 24 Ω, R
DS
V
V
V
V
-
-
-
DS
DD
f = 1.0 MHz, see fig. 9
DS
GS
TEST CONDITIONS
= max. rating, V
≤ - 50 V, I
= - 25 V, I
F
= V
I
= 0 V, I
D
V
V
= - 4,7 A, dI/dt = 100 A/µs
V
= - 4.7 A, V
GS
DS
S
(Independent operating
GS
GS
D
= - 5.3 A, V
, I
= ± 20 V
= - 25 V,
= 5.6 Ω, see fig. 15
rating, see fig. 16
= 0 V,
D
D
temperature)
I
DS
= - 250 µA
D
D
= - 250 µA
GS
= - 2.8 A
= - 4.7 A,
= - 2.8 A
= 0 V, T
DS
TYP.
GS
1.7
-
-
GS
= 0.8 x max.
= 0 V
G
G
= 0 V
J
b
= 125 °C
D
S
b
D
S
b
0.090
MIN.
- 2.0
- 50
MAX.
1.1
33
110
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
-
S09-0373-Rev. A, 09-Mar-09
Document Number: 91377
TYP.
0.22
240
160
0.5
1.7
6.1
2.0
3.9
6.1
4.5
7.5
30
47
13
35
75
-
-
-
-
-
-
-
-
- 1000
MAX.
± 500
- 250
S
- 4.0
- 5.3
- 5.5
0.52
- 18
160
0.7
9.1
3.0
5.9
9.2
71
20
59
and L
-
-
-
-
-
-
-
UNIT
°C/W
D
UNIT
)
µA
nC
nH
µC
nA
pF
ns
ns
V
V
Ω
S
A
V