SIHFU9012 Vishay, SIHFU9012 Datasheet

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SIHFU9012

Manufacturer Part Number
SIHFU9012
Description
Power Mosfet
Manufacturer
Vishay
Datasheet
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
c. I
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91377
S09-0373-Rev. A, 09-Mar-09
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 5.3 A, dI/dt ≤ - 80 A/µs, V
= - 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
= 25 °C, L = 9.7 mH, R
D S
c
DPAK (TO-252)
IRFR9012PbF
SiHFR9012-E3
IRFR9012
SiHFR9012
a
a
V
b
GS
DD
= - 10 V
≤ 40 V, T
G
Single
P-Channel MOSFET
- 50
IRFR9012, IRFU9012, SiHFR9012, SiHFU9012
9.1
3.0
5.9
J
≤ 150 °C, suggested R
G
d
= 25 Ω, peak I
C
S
Power MOSFET
D
V
= 25 °C, unless otherwise noted
0.70
GS
DPAK (TO-252)
IRFR9012TRPbF
SiHFR9012T-E3
IRFR9012TR
SiHFR9012T
at - 10 V
T
for 10 s
C
L
= 25 °C
= - 5.3 A.
T
T
G
a
a
C
C
= 24 Ω.
= 100 °C
= 25 °C
FEATURES
• Surface Mountable (Order as IRFR9012, SiHFR9012)
• Straight Lead Option (Order as IRFU9012, SiHFU9012)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt capability.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
Power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
a
a
SYMBOL
DPAK (TO-252)
IRFR9012TRLPbF
SiHFR9012TL-E3
IRFR9012TRL
SiHFR9012TL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
a
a
- 55 to + 150
LIMIT
± 20
- 4.5
- 2.8
0.20
- 5.3
- 50
- 18
240
300
2.5
5.8
25
Vishay Siliconix
IPAK (TO-251)
IRFU9012PbF
SiHFU9012-E3
IRFU9012
SiHFU9012
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
V
A
A
W
Available
1

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SIHFU9012 Summary of contents

Page 1

... Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9012, SiHFR9012 is provided tape. The straight lead option IRFU9012, SiHFU9012 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat ...

Page 2

... IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink a Maximum Junction-to-Case (Drain) Note a. Mounting pad must cover heatsink surface area. SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Transfer Characteristics Fig Typical Saturation Characteristics Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage Vishay Siliconix Fig Maximum Safe Operating Area www.vishay.com ...

Page 4

... IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 ...

Page 5

... Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Fig Maximum Avalanche vs. Starting Junction Vary t required I Fig. 13b - Unclamped Inductive Test Circuit I V Fig. 13c - Unclamped Inductive Waveforms Vishay Siliconix ...

Page 6

... IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration t t d(on Fig. 15a - Switching Time Waveforms D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 15b - Switching Time Test Circuit www ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91377. Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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