SIE878DF Vishay, SIE878DF Datasheet - Page 3

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SIE878DF

Manufacturer Part Number
SIE878DF
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
0.007
0.006
0.005
0.004
0.003
120
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
= 20 A
0.5
V
20
DS
5
V
DS
Output Characteristics
= 6.3V
V
Q
- Drain-to-Source Voltage (V)
GS
g
1.0
I
- Total Gate Charge (nC)
D
V
Gate Charge
= 10 V thru 4 V
- Drain Current (A)
DS
40
10
=12.5V
1.5
60
15
2.0
V
DS
V
V
V
GS
GS
GS
= 20 V
80
20
= 4.5 V
= 10 V
25 °C, unless otherwise noted
2.5
= 3 V
100
3.0
25
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
8
4
0
- 50
0.0
0
I
On-Resistance vs. Junction Temperature
D
C
C
= 20 A
rss
- 25
C
iss
oss
0.5
V
5
DS
T
V
J
Transfer Characteristics
GS
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
Capacitance
T
25
C
10
T
= - 55 °C
C
= 125 °C
T
1.5
C
50
= 25 °C
Vishay Siliconix
V
15
GS
75
2.0
= 10 V
SiE878DF
100
www.vishay.com
20
2.5
125
3.0
25
150
3

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