SIE878DF Vishay, SIE878DF Datasheet

no-image

SIE878DF

Manufacturer Part Number
SIE878DF
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
www.vishay.com/doc?68797
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
C
DS
10
D
25
D
1
= 25 °C. Package limited.
(V)
G
G
2
9
Top View
S
3
S
8
0.0068 at V
0.0052 at V
D
R
S
4
S
7
DS(on)
GS
GS
D
5
D
(Ω)
6
J
= 4.5 V
= 10 V
PolarPAK
= 150 °C)
N-Channel 25-V (D-S) MOSFET
6
D
5
I
D
45
45
(A)
7
Bottom View
4
a
S
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8
C
C
A
A
C
A
C
C
A
A
A
3
Q
11.2 nC
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
g
G
9
2
(Typ.)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra Low Thermal Resistance Using Top-
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• Compliant to RoHS directive 2002/95/EC
• VRM, POL
• DC/DC Conversion
• Server
• High-Side Switch
Definition
Exposed PolarPAK
Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen III Power MOSFET
Ratio Helps Prevent Shoot-Through
- 55 to 150
®
4.3
5.2
3.3
Limit
24
19
± 20
42.5
20.8
Package for Double-
100
45
260
25
25
31
25
16
b, c
b, c
b, c
b, c
b, c
a
G
www.vishay.com/ppg?65456
For Related Documents
N-Channel MOSFET
Vishay Siliconix
D
S
SiE878DF
www.vishay.com
Unit
mJ
°C
W
V
A
1

Related parts for SIE878DF

SIE878DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE878DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... 2.0 2.5 3.0 0.0 2000 1600 1200 800 GS 400 100 1.8 1.6 1.4 1 1.0 0.8 0 SiE878DF Vishay Siliconix T = 125 ° ° °C C 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 100 T = 100 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1.8 1 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C, unless otherwise noted 0.020 0.016 0.012 °C J 0.008 0.004 0.000 0.8 1.0 1 250 µ ...

Page 5

... Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 25 °C, unless otherwise noted 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE878DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com ...

Page 6

... SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords