SIE800DF Vishay, SIE800DF Datasheet - Page 4

• Manufacturer Part Number: SIE800DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
3.0
2.6
2.2
1.8
1.4
1.0
60
10
1
- 50
0.00
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
0.4
T
– Temperature (°C)
J
25
= 150 °C
50
0.6
I
D
75
= 250 µA
by r
0.01
*Limited
100
0.1
0.8
10
1
DS(on)
0.1
100
*V
Safe Operating Area, Junction-to-Ambient
T
GS
1.0
J
= 25 °C
125
V
minimum V
DS
New Product
1.2
150
– Drain-to-Source Voltage (V)
Single Pulse
1
T
A
= 25 °C
GS
at which r
10
DS(on)
0.020
0.016
0.012
0.008
0.004
50
40
30
20
10
is specified
0
0.01
0
Single Pulse Power, Junction-to-Ambient
10 s
dc
10 ms
100 ms
1 ms
On-Resistance vs. Gate-to-Source Voltage
1 s
100
0.1
2
V
GS
– Gate-to-Source Voltage (V)
1
Time (sec)
4
S-71684-Rev. E, 13-Aug-07
T
Document Number: 73199
10
A
= 25 °C
6
I
D
T
= 10.8 A
100
A
= 125 °C
8
1000
10