SIE800DF Vishay, SIE800DF Datasheet - Page 3

• Manufacturer Part Number: SIE800DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73199
S-71684-Rev. E, 13-Aug-07
0.014
0.012
0.010
0.008
0.006
0.004
60
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
10
0
8
6
4
2
0
0.0
0
0
I
D
10
= 18.5 A
0.4
V
5
DS
Output Characteristics
Q
V
– Drain-to-Source Voltage (V)
g
GS
V
I
V
DS
– Total Gate Charge (nC)
20
D
GS
= 4.5 V
Gate Charge
0.8
– Drain Current (A)
= 15 V
10
= 10 thru 5 V
V
GS
30
= 10 V
V
1.2
15
DS
= 24 V
40
1.6
20
50
3 V
4 V
New Product
2.0
25
60
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
5
0
0
- 50
1.5
0
On-Resistance vs. Junction Temperature
I
C
D
- 25
rss
= 10.8 A
5
2.0
V
V
GS
DS
T
Transfer Characteristics
J
0
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
T
C
10
= 125 °C
25 °C
25
Capacitance
2.5
C
oss
V
GS
C
15
50
iss
= 10 V
Vishay Siliconix
3.0
75
20
SiE800DF
V
100
GS
www.vishay.com
3.5
- 55 °C
= 4.5 V
25
125
4.0
150
30
3