MTP3N60 STMicroelectronics, MTP3N60 Datasheet

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MTP3N60

Manufacturer Part Number
MTP3N60
Description
N - Channel Enhancement Mode Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
MTP3N60
MTP3N60FI
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
V
D M
V
V
V
P
T
DG R
I
I
T
ISO
stg
D S
GS
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
600 V
600 V
V
= 2
DSS
Parameter
< 2.5
< 2.5
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
3.9 A
2.5 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
TO-220
MTP3N60
100
3.9
2.4
0.8
14
1
-65 to 150
2
Value
3
600
600
150
20
MTP3N60FI
MTP3N60FI
ISOWATT220
MTP3N60
2000
0.28
2.5
1.5
14
35
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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MTP3N60 Summary of contents

Page 1

... November 1996 POWER MOS TRANSISTOR I D 3 TO-220 INTERNAL SCHEMATIC DIAGRAM Value MTP3N60 600 600 3 100 C 2 100 0.8 -65 to 150 150 MTP3N60 MTP3N60FI ISOWATT220 Unit MTP3N60FI 2 2000 1/10 ...

Page 2

... MTP3N60/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited by T max Single Pulse Avalanche Energy ...

Page 3

... Test Conditions Min. = 480 Test Conditions Min di/dt = 100 100 150 C j Safe Operating Areas For ISOWATT220 MTP3N60/FI Typ. Max. Unit 200 Typ. Max. Unit ...

Page 4

... MTP3N60/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature MTP3N60/FI Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

... MTP3N60/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time MTP3N60/FI Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit 7/10 ...

Page 8

... MTP3N60/FI TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia 8/10 inch MAX. MIN. TYP. 4.60 0.173 1.32 0.048 2.72 0.094 0.050 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 0.645 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 L2 L9 ...

Page 9

... MAX. MIN. TYP. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 0.630 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 MTP3N60/FI MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... MTP3N60/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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