MTD1P40E ON Semiconductor, MTD1P40E Datasheet - Page 2

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MTD1P40E

Manufacturer Part Number
MTD1P40E
Description
Power Mosfet 1 Amp, 400 Volts
Manufacturer
ON Semiconductor
Datasheet
1. When surface mounted to an FR4 board using the minimum recommended
2. When surface mounted to an FR4 board using 1 pad size.
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
pad size.
− Continuous
− Single Pulse (t
Derate above 25 C
(V
I
− Junction to Case
− Junction to Ambient (Note 1.)
− Junction to Ambient (Note 2.)
L
DD
= 3.0 Apk, L = 10 mH, R
= 100 Vdc, V
− Continuous @ 100 C
− Single Pulse (t
p
GS
50 s)
GS
(T
= 10 Vdc,
= 1.0 M )
C
= 25 C unless otherwise noted)
C
G
= 25 C, when mounted with the minimum recommended pad size
p
= 25 )
10 s)
Rating
http://onsemi.com
MTD1P40E
J
= 25 C
2
Symbol
T
V
V
V
R
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
GS
AS
D
D
D
JC
JA
JA
L
stg
−55 to
Value
0.53
1.75
1.91
71.4
400
400
150
120
260
1.0
0.8
3.5
65
45
20
25
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C

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