SIR436DP Vishay, SIR436DP Datasheet - Page 4

• Manufacturer Part Number: SIR436DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR436DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
Limited by R
I
75
D
0.8
= 250 µA
0.01
100
T
0.1
10
J
100
1
0.1
= - 50 °C
T
I
1.0
D
Safe Operating Area, Junction-to-Ambient
J
* V
DS(on)
Single Pulse
= 25 °C
= 5 mA
125
T
A
GS
= 25 °C
*
> minimum V
1.2
150
V
DS
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
0.025
0.020
0.015
0.010
0.005
0.000
10
DS(on)
200
160
120
80
40
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
1 s
10 s
100 s, DC
100 ms
1
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-82666-Rev. A, 03-Nov-08
T
Document Number: 69011
J
T
6
J
= 125 °C
= 25 °C
7
1
8
9
10
1
0