SIR436DP Vishay, SIR436DP Datasheet - Page 3

• Manufacturer Part Number: SIR436DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
0.008
0.006
0.004
0.002
0.000
80
60
40
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
20
V
= 20 A
DS
6
V
0.5
DS
= 6 V
Q
V
Output Characteristics
V
V
GS
g
GS
GS
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
40
I
D
= 4.5 V
= 10 V
= 10 thru 4 V
Gate Charge
- Drain Current (A)
12
1.0
60
V
DS
= 19 V
18
80
V
DS
1.5
= 12.5 V
V
24
100
GS
= 3 V
120
2.0
30
2400
1800
1200
600
1.7
1.5
1.3
1.1
0.9
0.7
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
0.5
= 20 A
5
V
V
GS
DS
Transfer Characteristics
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
1.0
C
25
= 125 °C
Capacitance
10
T
C
= 25 °C
C
1.5
50
V
oss
Vishay Siliconix
GS
= 10 V
15
75
SiR436DP
2.0
C
iss
V
www.vishay.com
100
GS
T
C
20
= 4.5 V
2.5
= - 55 °C
125
150
3.0
25
3