GWM160-0055X1 IXYS Corporation, GWM160-0055X1 Datasheet - Page 6

• Manufacturer Part Number: GWM160-0055X1
• Description: Three Phase Full Bridge With Trench Mosfets In Dcb Isolated High Current Package
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
0
200
200
Fig. 7
Fig. 3 Reverse recovery time t
Fig. 5 Reverse recovery charge Q
I
F
V
V
I
I
F
GS
D
DS
= 50 A
= 50 A
100 A
160 A
160 A
0,1 I
100 A
0,1 V
t
400
400
d(on)
D
GS
of the body diode vs. di/dt
of the body diode vs. di/dt
Definition of switching times
0,9 I
t
r
D
-di
600
600
-di
F
F
/dt [A/µs]
/dt [A/µs]
800
800
rr
1000
1000
V
T
V
T
J
J
R
R
0,9 V
= 125°C
= 125°C
= 24 V
= 24 V
rr
t
d(off)
GS
1200
1200
0,9 I
t
f
D
0,1 I
D
t
t
350
300
250
200
150
100
30
25
20
15
10
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
0
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Fig. 4 Reverse recovery current I
Fig. 6 Source drain diode current I
Fig. 8 Typ. thermal impedance junction to
I
F
V
= 50 A
GS
100 A
T
= 0 V
160 A
J
400
= -25°C
heatsink Z
source drain voltage V
125°C
150°C
of the body diode vs. di/dt
25°C
10
GWM 160-0055X1
-di
600
F
V
t [ms]
thJH
/dt [A/µs]
SD
100
with heat transfer paste
[V]
800
SD
1000
1000
V
T
(body diode)
J
R
GWM 160-0055X1
= 125°C
RM
= 24 V
F
vs.
1200
20080527f
10000
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