BUK127-50GT NXP Semiconductors, BUK127-50GT Datasheet - Page 4

• Manufacturer Part Number: BUK127-50GT
• Description: Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
SWITCHING CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUE
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C ≤ T
1 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
December 2001
PowerMOS transistor
Logic level TOPFET
a
SYMBOL PARAMETER
t
t
t
t
SYMBOL PARAMETER
I
SYMBOL PARAMETER
V
t
d on
r
d off
f
S
rr
= 25 ˚C; resistive load R
SDO
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Continuous forward current
Forward voltage
Reverse recovery time
mb
≤ 150˚C; typicals are for T
L
= 50 Ω; adjust V
DD
CONDITIONS
V
V
CONDITIONS
I
not applicable
to obtain I
S
IS
IS
= 2 A; V
= 0 V to V
= 5 V to V
mb
CONDITIONS
T
= 25˚C unless otherwise specified
mb
IS
D
≤ 25 ˚C; V
4
= 250 mA; refer to test circuit and waveforms
= 0 V; t
IS
IS
1
= 5 V
= 0 V
p
IS
= 300 µs
= 0 V
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
TYP.
TYP.
0.83
0.5
0.7
3.2
1.6
BUK127-50GT
-
Product specification
MAX.
2
MAX.
MAX.
0.9
1.5
6.5
3.5
1.1
-
Rev 2.000
UNIT
UNIT
UNIT
A
µs
µs
µs
µs
V
-