BUK108-50DL NXP Semiconductors, BUK108-50DL Datasheet - Page 7

• Manufacturer Part Number: BUK108-50DL
• Description: Buk108-50dl Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
Logic level TOPFET
I
Fig.16. Test circuit for resistive load switching times.
ISL
Fig.14. Typical DC input characteristics, T
Fig.15. Typical reverse diode current, T
60
50
40
30
20
10
600
500
400
300
200
100
0
& I
0
I
0
IS / A
S
IS
0
VIS
IISL & IIS / uA
= f(V
= f(V
0.2
SDS
IS
); protection latched & normal operation
); conditions: V
0.4
RESET
R
I
2
0.6
TOPFET
I
VSD / V
VIS / V
PROTECTION LATCHED
RL
P
0.8
IS
= 0 V; t
D
S
ID measure
VDD
0R1
D.U.T.
4
1
IISL
p
= 250 s
IIS
NORMAL
BUK108-50DL
1.2
BUK108-50DL
j
= 25 ˚C.
j
= 25 ˚C.
0V
1.4
6
7
Fig.17. Typical switching waveforms, resistive load.
120
110
100
Fig.19. Clamping energy test circuit, R
90
80
70
60
50
40
30
20
10
10
0
E
VDS
ID
VIS
Fig.18. Normalised limiting clamping energy.
5
0
0
0
0
DSM
V
0
0
EDSM%
VIS / V & VDS / V
DD
% = f(T
E
= 13 V; R
DSM
20
RIS
VDS
0.5 LI
mb
100
40
); conditions: I
V(CL)DSS
VDD
L
= 4 ; R
I
TOPFET
D
Schottky
2
60
V
P
time / us
Tmb / C
CL DSS
VIS
200
D
S
I
L
80
= 50 , T
D.U.T.
VDS
D
V
= 15 A; V
BUK108-50DL
CL DSS
Product specification
100
300
shunt
R 01
j
BUK108-50DL
= 25 ˚C.
+
V
-
120
IS
DD
IS
= 50 .
= 5 V
Rev 1.000
-ID/100
VDD
140
400