ECH8605 Sanyo Semiconductor Corporation, ECH8605 Datasheet

ECH8605

Manufacturer Part Number

ECH8605

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.ECH8605.pdf (4 pages)

Current page: 1 of 4
Download datasheet (33Kb)

Ordering number : ENN7405

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JD

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

P T

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -30V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

ECH8605

Package Dimensions

unit : mm

2206A

0.65

Conditions

Top View

Conditions

0.3

2.9

0.8mm)1unit

0.8mm)

[ECH8605]

Bottom View

min

P-Channel Silicon MOSFET

--1.0

--30

13003 TS IM TA-100300

0.15

Ratings

typ

Ratings

ECH8605

--55 to +150

Continued on next page.

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SANYO : ECH8

max

150

- -30

- -40

--2.4

1.3

1.5

--4

--1

No.7405-1/4

Unit

Related parts for ECH8605

ECH8605 Summary of contents

Page 1

... Tstg Symbol Conditions V (BR)DSS I D =--1mA DSS -30V GSS 16V (off -10V =--1mA P-Channel Silicon MOSFET ECH8605 [ECH8605] 0. Source1 2 : Gate1 Bottom View 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Ratings ...

Page 2

... See specified Test Circuit =--10V =--10V -4A Qgs V DS =--10V =--10V -4A Qgd V DS =--10V =--10V - =--4A Electrical Connection --15V -- =7 OUT ECH8605 S --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 --0.7 --0.8 --0.9 --1 ...

Page 3

... Total Gate Charge 2.0 Mounted on a ceramic board(900mm 1.8 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature ECH8605 --10V 2 -- --1 --0 --0. --0.001 --0.2 --0.3 --10 IT05576 --15V ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2003. Specifications and information herein are subject to change without notice. ECH8605 PS No.7405-4/4 ...

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