BSD314SPE Infineon Technologies Corporation, BSD314SPE Datasheet - Page 7

• Manufacturer Part Number: BSD314SPE
• Description: Small Signal Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
33
32
31
30
29
28
27
AV
-1
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
125 °C
2
100
100 °C
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1.5 A pulsed
g s
4 V
1
Q
Q
gate
g
Q
16 V
sw
[nC]
Q
10 V
g d
2
BSD314SPE
Q
g ate
2009-04-01
3