BSD314SPE Infineon Technologies Corporation, BSD314SPE Datasheet - Page 6

• Manufacturer Part Number: BSD314SPE
• Description: Small Signal Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
250
200
150
100
10
10
10
10
50
DS
=f(T
0
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz; T
=-1.5 A; V
5
20
98 %
GS
V
T
=-10 V
DS
j
60
10
[°C]
typ
[V]
j
Coss
Ciss
=25°C
Crss
100
15
140
180
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.5
1.5
0.5
10
10
=f(T
SD
2
1
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
; I
20
150 °C
D
=-6.3 µA
0.8
V
T
SD
j
60
[°C]
2 %
[V]
25 °C
typ
25 °C, 98%
98 %
100
1.2
150 °C, 98%
BSD314SPE
140
1.6
2009-04-01
180