SIA411DJ Vishay, SIA411DJ Datasheet - Page 3

• Manufacturer Part Number: SIA411DJ
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
0.12
0.10
0.08
0.06
0.04
0.02
On-Resistance vs. Drain Current and Gate Voltage
20
16
12
8
4
0
8
6
4
2
0
0.0
0
0
I
D
= 8.8 A
4
5
V
0.5
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
- Total Gate Charge (nC)
GS
I
D
Gate Charge
- Drain Current (A)
10
= 1.8 V
8
V
DS
1.0
= 10 V
12
15
V
V
DS
GS
V
= 16 V
1.5
GS
= 2 thru 5 V
V
16
20
= 2.5 V
GS
1 V
= 4.5 V
1.5 V
New Product
2.0
20
25
2100
1800
1500
1200
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
- 50
0.0
0
I
On-Resistance vs. Junction Temperature
C
D
rss
= 5.9 A
- 25
0.3
4
V
T
V
J
DS
0
Transfer Characteristics
GS
- Junction Temperature (°C)
C
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
V
0.6
T
8
GS
C
= 25 °C
= 4.5 V, 2.5 V, 1.8 V
C
50
Vishay Siliconix
iss
T
C
0.9
12
= 125 °C
75
SiA411DJ
www.vishay.com
100
T
C
1.2
16
= - 55 °C
125
150
1.5
20
3