SIA411DJ Vishay, SIA411DJ Datasheet - Page 4

• Manufacturer Part Number: SIA411DJ
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiA411DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
Soure-Drain Diode Forward Voltage
- 25
0.2
T
V
J
SD
= 150 °C
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
I
D
- Temperature (°C)
25
= 250 µA
0.6
50
75
T
J
0.8
= 25 °C
0.01
100
100
0.1
10
1
0.1
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
Limited by R
T
GS
A
= 25 °C
150
1.2
New Product
minimum V
V
DS
- Drain-to-Source Voltage (V)
DS(on)*
1
GS
at which R
10
DS(on)
0.12
0.09
0.06
0.03
0.00
30
25
20
15
10
5
0
0.001
0
is specified
I
On-Resistance vs. Gate-to-Source Voltage
100 µs
1 ms
10 ms
100 ms
1 s
10 s
D
Single Pulse Power, Junction-to-Ambient
dc
= 5.9 A
BVDSS
Limited
0.01
1
V
100
GS
- Gate-to-Source Voltage (V)
0.1
25 °C
2
Time (s)
125 °C
1
S-80435-Rev. C, 03-Mar-08
Document Number: 74464
3
10
4
100
1000
5