TF252TH Sanyo Semiconductor Corporation, TF252TH Datasheet - Page 2
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TF252TH
Manufacturer Part Number
TF252TH
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.TF252TH.pdf
(4 pages)
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Electrical Characteristics at Ta=25°C
*
Package Dimensions
unit : mm (typ)
7031-001
: The TF252TH is classified by I DSS as follows : (unit :
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, V CC =2V, R L =2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
300
250
200
150
100
50
0
0
Rank
I DSS
Bottom View
Top View
1
1.4
Parameter
3
0.45
2
Drain-to-Source Voltage, V DS -- V
0.25
0.2
0.5
140 to 240
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
4
0.1
I D -- V DS
1.0
210 to 350
V (BR)GDO
V GS (off)
Symbol
5
∆G VV
yfs
I DSS
∆Gvf
V NO
Ciss
Crss
THD
G V
1.5
µ
A)
--0.30V
I G =- -100µA
V DS =2V, I D =1µA
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V DS =2V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2.0→1.5V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
IT12440
2.0
TF252TH
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Conditions
350
300
250
200
150
100
50
0
0
5pF
OSC
Drain-to-Source Voltage, V DS -- V
1
min
140*
--0.1
I D -- V DS
--20
0.8
2
VTVM
Ratings
2.2kΩ
33µF
+
typ
--106
0.95
0.65
--0.4
--0.6
1.4
3.1
1.0
3
V
THD
max
--102
350*
--1.0
--2.0
--1.0
4
No. A0842-2/4
V CC =2V
V CC =1.5V
--0.4V
IT12441
Unit
mS
µA
dB
dB
dB
dB
pF
pF
%
V
V
5