TF250TH Sanyo Semiconductor Corporation, TF250TH Datasheet - Page 2

• Manufacturer Part Number: TF250TH
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7031-001
[Ta=25 C, V CC =2V, R L =2.2k , Cin=5pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
300
250
200
150
100
50
0
0
Bottom View
Top View
1
1.4
Parameter
3
0.45
Drain-to-Source Voltage, V DS -- V
2
0.25
0.2
0.5
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
I D -- V DS
0.1
1.0
Symbol
V NO
THD
G VV
G V
Gvf
1.5
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2 1.5V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
--0.4V
IT10917
2.0
TF250TH
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Conditions
300
250
200
150
100
50
0
0
5pF
OSC
Drain-to-Source Voltage, V DS -- V
1
min
I D -- V DS
2
Ratings
VTVM
typ
2.2k
33 F
+
--0.7
0.8
0.6
3
V
THD
max
--100
--2.0
--1.0
4
No. A0381-2/4
V CC =2V
V CC =1.5V
--0.4V
IT10918
Unit
dB
dB
dB
dB
%
5