SGM2306 SeCoS Halbleitertechnologie GmbH, SGM2306 Datasheet - Page 2

• Manufacturer Part Number: SGM2306
• Description: N-channel Enhancement Mode Power Mos.fet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Source-Drain Diode
Notes: 1.Pulse width limited by Max. junction temperature.
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Rise Time
Turn-off Delay Time
Reverse Recovery Time
Reverse Recovery Charge
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current (Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Forward Transconductance
Forward On Voltage
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on FR4 board, t 10sec.
Elektronische Bauelemente
Parameter
Parameter
2
2
≦
2
2
2
o
o
C
C
≦
≦
o
BV
Symbol
Symbol
R
Td
BV
Td
V
Crss
Ciss
Coss
V
DS
I
DS(ON)
Qg
Qgs
Qgd
Gfs
I
Trr
Qrr
GS(th)
T f
GSS
Tr
DSS
(ON)
SD
(Off)
DSS
/ Tj
Min.
0.5
Min.
20
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
N-Channel Enhancement Mode Power Mos.FET
Typ.
Typ.
0.1
18.4
603
144
111
16.8
8.7
1.5
2.8
3.6
14
13
_
11
6
_
_
_
_
_
_
_
_
_
Max.
±
Max.
1.2
100
1.2
10
30
35
50
90
_
1
_
_
_
_
_
_
_
_
_
5.3A, 20V,R
_
_
_
_
_
SGM2306
Any changing of specification will not be informed individual
Unit
V/
Unit
m
nA
uA
uA
V
nC
pF
nS
nS
S
nC
V
V
o
Ω
C
DS(ON)
Reference to 25 , I
V
V
V
V
V
V
V
V
V
V
V
I
V
R
R
I
V
V
V
I
Is=5A,V
dl/dt=100A/uS
Test Condition
D
D
f=1.0MHz
GS
DS
S
GS
DS
DS
DS
V
Test Condition
GS
GS
GS
GS
DS
GS
GS
=1A
G
D
=5.3A
GS
DS
=1.2A, V
=2
=15
DS
=V
=0V, I
=20V,V
=16V,V
=15V
= 12V
=10V, I
=4.5V, I
=1.8V, I
=2.5V, I
=10V
=10V
=4.5V
=0V
=15V
±
=5V, I
Ω
GS,
32m
Ω
I
D
D
GS
=250uA
=250uA
GS
GS
D
D
D
D
D
=5.5A
=5.3A
GS
=0V
=5.3A
Ω
=1A
=2.6A
=0
=0
=0V.
o
C
D
= 1mA
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