SGM2306 SeCoS Halbleitertechnologie GmbH, SGM2306 Datasheet
SGM2306
Available stocks
Related parts for SGM2306
SGM2306 Summary of contents
Page 1
... Elektronische Bauelemente Description The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. Features * Capable Of 2.5V Gate Drive * Lower On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage ...
Page 2
... T f 2.8 _ 603 Ciss _ Coss 144 _ Crss 111 _ Gfs 13 Symbol Min. Typ Trr 16.8 _ Qrr ≦ ≦ SGM2306 5.3A, 20V,R 32m DS(ON) Max. Unit Test Condition =0V Reference 1 GS, _ 100 ± 12V ± ...
Page 3
... Elektronische Bauelemente Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM2306 5.3A, 20V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. ...
Page 4
... Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM2306 5.3A, 20V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Ω ...