NGB8207AN ON Semiconductor, NGB8207AN Datasheet - Page 4

• Manufacturer Part Number: NGB8207AN
• Description: Ignition Igbt 20 A, 365 V, N-channel D2pak
• Manufacturer: ON Semiconductor

2.75
2.25
1.75
1.25
0.75
60
50
40
30
20
10
2.0
1.5
1.0
2.5
35
30
25
20
15
10
0
5
0
0
2
0
V
T
T
J
GE
Figure 1. Typical Self Clamped Inductive
Figure 3. Collector−to−Emitter Voltage vs.
V
10
1
J
= −40°C
CE
150°C
4
Figure 5. On−Region Characteristics
= 175°C
= 4.0 V
25°C
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
Switching Performance (SCIS)
20
2
GE
6
I
C
= 6.0 V
, COLLECTOR CURRENT (A)
30
3
Collector Current
8
@ T
40
4
10
J
T
L (mH)
J
= 255C
50
5
= 25°C
5.0 V
12
TYPICAL ELECTRICAL CHARACTERISTICS
60
6
14
70
7
V
V
V
V
V
16
GE
GE
GE
GE
GE
80
8
= 4.5 V
= 4.0 V
= 3.5 V
= 3.0 V
= 2.5 V
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18
9
90
10
100
20
4
2.75
2.25
1.75
1.25
2.5
2.0
1.5
35
30
25
20
15
10
60
50
40
30
20
10
5
0
−40
0
0
0
100
Figure 4. Collector−to−Emitter Voltage vs.
V
−20
GE
Figure 2. Typical Self Clamped Inductive
V
1
CE
Figure 6. On−Region Characteristics
150°C
200
= 4.0 V
, COLLECTOR−TO−EMITTER VOLTAGE (V)
0
Switching Performance (SCIS)
T
2
J
300 400
, JUNCTION TEMPERATURE (°C)
20
Junction Temperature
25°C
3
CLAMPING TIME (mS)
I
C
40
@ T
= 6.0 A
500
4
V
GE
I
I
I
60
J
C
C
C
600
= −405C
= 20 A
= 16 A
= 10 A
= 6.0 V
5
80
700
6
100
800
7
120
900
5.0 V
I
V
V
V
V
C
10001100
140
GE
GE
GE
GE
8
= 8.0 A
= 4.0 V
= 3.5 V
= 3.0 V
= 2.5 V
160
4.5 V
9
1200
180
10