NGB8207AN ON Semiconductor, NGB8207AN Datasheet - Page 3

• Manufacturer Part Number: NGB8207AN
• Description: Ignition Igbt 20 A, 365 V, N-channel D2pak
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Collector−to−Emitter On−Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time (Resistive)
Low Voltage
Rise Time (Resistive)
Low Voltage
Turn−Off Delay Time (Resistive)
Low Voltage
Fall Time (Resistive)
Low Voltage
Turn−On Delay Time (Resistive)
High Voltage
Rise Time (Resistive)
High Voltage
Turn−Off Delay Time (Resistive)
High Voltage
Fall Time (Resistive)
High Voltage
Characteristic
Symbol
V
C
C
t
t
t
t
C
CE(on)
d(on)
d(off)
d(on)
d(off)
gfs
OSS
RSS
ISS
t
t
t
t
r
f
r
f
http://onsemi.com
Test Conditions
R
R
R
R
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 10 kHz
R
R
R
R
I
I
G
G
G
G
CE
CE
GE
I
GE
I
GE
I
GE
GE
GE
GE
GE
CE
C
C
CE
CE
CE
C
C
C
L
L
L
L
= 1000 W
= 1000 W
= 1000 W
= 1000 W
= 6.0 A
= 8.0 A
3
= 10 A
= 10 A
= 10 A
= 1.0 W
= 1.0 W
= 46 W
= 46 W
= 300 V
= 300 V
= 4.0 V
= 3.7 V
= 4.0 V
= 4.5 V
= 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V
= 25 V
= 14 V
= 14 V
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
1.35
1.35
1.35
750
Min
1.2
1.4
1.4
1.5
1.5
1.5
1.5
1.4
1.4
0.5
2.0
2.0
8.0
0.5
0.7
4.0
6.0
75
−
4
1.65
1.85
1.75
1.75
15.8
0.55
2.32
0.65
Typ
810
1.6
1.7
1.8
1.9
1.8
1.8
1.8
1.8
2.5
1.8
4.7
90
10
10
7
2.05
0.75
Max
900
105
2.0
2.0
2.0
2.2
2.2
2.2
2.1
2.1
2.1
2.1
2.1
0.7
2.7
3.0
2.0
6.0
12
13
15
−
Mhos
mSec
Unit
pF
V