NGB8207N ON Semiconductor, NGB8207N Datasheet - Page 4

• Manufacturer Part Number: NGB8207N
• Description: Ignition Igbt 20 A, 365 V, Nchannel D2pak
• Manufacturer: ON Semiconductor

2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
0
5
0
0
0
0
V
5.0 V to 6.5 V
GE
Figure 3. Collector−to−Emitter Voltage vs.
Figure 1. Typical Self Clamped Inductive
V
2
1
Switching Performance (SCIS) @ 255C
= 4.0 V @ T
CE
Figure 5. On−Region Characteristics
V
V
, COLLECTOR−TO−EMITTER VOLTAGE (V)
50
GE
4
GE
2
70 mS 40 A
= 10 V
= 4.0 V @ T
510 mJ
6
3
100
J
Collector Current
I
CLAMPING TIME (mS)
C
= −40°C
8
, COLLECTOR (A)
@ T
4
140 mS 25.6 A
10
J
J
660 mJ
= 175°C
150
= 255C
5
12
V
4.8 V
TYPICAL ELECTRICAL CHARACTERISTICS
GE
6
= 4.0 V @ T
14
200
7
175 mS 21 A
16
675 mJ
V
8
18
GE
250
J
= 25°C
= 4.5 V
http://onsemi.com
9
20
NGB8207N
10
300
22
4
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0
−50
0
0
4.8 V to 6.5 V
Figure 4. Collector−to−Emitter Voltage vs.
−25
Figure 2. Typical Self Clamped Inductive
V
Switching Performance (SCIS) @ 1505C
1
CE
Figure 6. On−Region Characteristics
V
I
I
GE
C
C
, COLLECTOR−TO−EMITTER VOLTAGE (V)
35 mS 39.8 A
50
= 20 A
= 15 A
T
2
= 10 V
0
J
250 mJ
, JUNCTION TEMPERATURE (°C)
Junction Temperature
3
CLAMPING TIME (mS)
25
@ T
I
100
I
C
C
4
= 6.0 A
= 10 A
50
J
= −405C
4.5 V
5
140 mS 16 A
75
400 mJ
150
6
100
I
C
= 8.0 A
7
125
200
230 mS 9 A
8
375 mJ
150
4.2 V
9
250
175
10