NGB8207N ON Semiconductor, NGB8207N Datasheet

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NGB8207N

Manufacturer Part Number
NGB8207N
Description
Ignition Igbt 20 A, 365 V, Nchannel D2pak
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NGB8207NT4G
Manufacturer:
ON
Quantity:
12 500
NGB8207N
Ignition IGBT
20 A, 365 V, N−Channel D
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ T
Derate above 25°C (Note 1)
Operating & Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Microprocessor Devices
Ideal for Coil−on−Plug and Driver−on−Coil Applications
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy − 500 mJ
Gate Resistor (R
This is a Pb−Free Device
Ignition Systems
C
= 25°C − Pulsed
Rating
G
) = 70 W
(T
J
= 25°C unless otherwise noted)
C
= 25°C
2
PAK
Symbol
T
V
ESD
ESD
ESD
J
V
P
, T
CES
I
I
I
GE
C
G
G
D
stg
−55 to
Value
+175
$15
365
500
165
1.0
2.0
8.0
1.1
20
50
20
1
W/°C
Unit
A
A
mA
mA
kV
kV
°C
W
V
V
V
DC
AC
†For information on tape and reel specifications,
NGB8207NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
G
1
V
I
NGB8207N = Device Code
A
Y
WW
G
ORDERING INFORMATION
C
CE(on)
= 10 A, V
MARKING DIAGRAM
Gate
http://onsemi.com
365 VOLTS
R
1
20 AMPS
R
(Pb−Free)
GE
Package
G
D
NGB
8207NG
AYWW
= 1.5 V Typ @
Collector
Collector
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
PAK
2
4
Publication Order Number:
GE
CASE 418B
STYLE 4
D
. 4.5 V
3
Emitter
2
800 / Tape & Reel
PAK
Shipping
C
E
NGB8207N/D

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NGB8207N Summary of contents

Page 1

... PAK CASE 418B STYLE 4 1 MARKING DIAGRAM 4 Collector NGB 8207NG AYWW 1 3 Gate Emitter 2 Collector NGB8207N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Device Package Shipping 2 D PAK 800 / Tape & Reel (Pb−Free) Publication Order Number: ...

Page 2

... Gate Resistor Gate−Emitter Resistor ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. NGB8207N = 1 kW Starting T = 25° Starting T = 125° 25° ...

Page 3

... Turn−On Delay Time (Resistive) High Voltage Rise Time (Resistive) High Voltage Turn−Off Delay Time (Resistive) High Voltage Fall Time (Resistive) High Voltage *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. NGB8207N Symbol Test Conditions Temperature 25°C CE(on ...

Page 4

... COLLECTOR−TO−EMITTER VOLTAGE (V) CE Figure 5. On−Region Characteristics @ T = 255C J NGB8207N 39 175 675 250 300 0 50 Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) @ 1505C 3.0 2.5 I ...

Page 5

... JUNCTION TEMPERATURE (°C) J Figure 9. Collector−to−Emitter Leakage Current vs. Temperature 10,000 1000 C iss 100 C oss 10 C rss 100 120 COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 11. Capacitance Variation NGB8207N 60 ≥ 1.0 2 Figure 8 ...

Page 6

... Temperature 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.000001 0.00001 Figure 15. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) NGB8207N 100 Single Pulse T = 25° Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) 0.1 1 ...

Page 7

... N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1.016 5.08 0.04 0.20 3.05 0.12 mm SCALE 3:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB8207N/D ...

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