IHD215 CT-Concept Technologie AG, IHD215 Datasheet - Page 14

• Manufacturer Part Number: IHD215
• Description: Intelligent Half-bridge Drivers For Igbts And Power Mosfets
• Manufacturer: CT-Concept Technologie AG

IHD 215/280/680
Data Sheet & Application Manual
The reference diode must be located as
close as possible to the driver module.
Pin 34 pin 23
Terminal Cs1 Cs2
Low-inductance blocking capacitors with
high ripple current capability (electrolytic
capacitors
connected to these outputs. They decouple
the DC/DC converter on the secondary
side and must be able to supply the pulse
currents
charging/discharging the gate capaci-
tances. They are connected between Cs1
charge/discharge currents for the gate
capacitance are largely drawn from these
Page 14
+15V
Fig. 7 Function principle of the blocking time
+15V
-15V
Cs2
0A
0V
0V
Input voltage
Gate voltage
t = Power-transistor turn-off in case of overcurrent
t - t = Blocking time (all input signals are ignored)
Load current
Status acknowledgement output
0
0
1
and COM1
are
(up
t
usually
0
to
COM2 . As the
I n t e r n e t :
Overcurrent turn-off threshold
8A)
used)
Blocking time
are
for
w w w . C T - C O N C E P T . c o m
electrolytic capacitors, these must be
located in the immediate proximity of the
driver module. The terminal assignment is
optimally suited for this purpose. Capaci-
tance values of up to 100 µF per channel
are recommended. Greater values should
not be used to ensure that the integrated
DC/DC converter starts with no problems.
In order to avoid the operating voltage
from „running-up“ on the secondary side,
a
suppressor must be connected in parallel
to the blocking capacitors. These diodes
are required on both channels, even if
one channel is not used. They should be
rated for a power dissipation of 1.3W.
16V-zener
diode
t 1
or
a
transient