IHD215 CT-Concept Technologie AG, IHD215 Datasheet - Page 12

• Manufacturer Part Number: IHD215
• Description: Intelligent Half-bridge Drivers For Igbts And Power Mosfets
• Manufacturer: CT-Concept Technologie AG

IHD 215/280/680
Data Sheet & Application Manual
It is mandatory to connect zener diodes
(anti-series connected) directly between
the gate and emitter for IGBTs. Their
zener voltage must correspond exactly to
the selected gate voltage (12V to 15V)
(see Fig. 10). They prevent the gate
voltage from rising due to parasitic effects
(e.g. the Miller effect) to a value exceed-
ing the nominal gate voltage. An exces-
sive gate voltage increases the short-
circuit current to an overproportional
degree and can lead to destruction of the
power semiconductors.
A sufficiently low-resistance termination of
the gate is ensured by the driver module
even when this is not supplied with the
operating voltage.
Pin 33 pin 22
Terminal E1 E2
This terminal must be connected to the
emitter or source terminal of the power
transistor. The connection to the emitter or
source terminal of the power element must
be as short and direct as possible. For
modules with an auxiliary emitter or
source this auxiliary terminal must be
used. The terminal is also used as the low
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Fig. 5 Asymmetrical gate resistors
I n t e r n e t :
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Pin 30 pin 19
Terminal ME1 ME2
This terminal is used for measuring the
voltage drop at the activated power tran-
sistor (in an on-state condition) in order to
ensure protection against short-circuit and
overload. It should be noted that this
terminal may under no circumstances be
connected directly to the drain or collector
of the power transistor. In order to protect
the measurement terminal from the high
drain or collector voltage of the deacti-
vated power element, a circuit with a high
reverse-blocking-voltage diode (Dme) or
two series-connected diodes of type
1N4007 should be provided (see Figs. 6
and 10). It is absolutely mandatory to
overdimension these diodes with respect
to voltage.
A pull-up resistor integrated in the module
ensures that when the power transistor is
activated, a current flows through the
measurement diode (Dme), the damping
resistor (Rme) and the transistor. Thus the
potential present at measurement input
ME1 corresponds to the forward voltage
end of the reference, whereby the latter
should be connected to the terminal E1 of
the driver module as directly as possible.
If the connections between a driver of the
IHD series and a power transistor are
implemented via link circuits, then a
length of 10 cm should not be exceeded
and the leads G1, E1 as well as the
measurement terminal (collector or drain
terminal) must be run in the form of
twisted wires for each transistor (see Fig.
9).