GT8G134 TOSHIBA Semiconductor CORPORATION, GT8G134 Datasheet - Page 4

• Manufacturer Part Number: GT8G134
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

200
160
120
200
160
120
160
120
80
40
80
40
80
40
0
0
0
0
0
0
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
Gate-emitter voltage V
1
1
1
Ta = −40°C
25
2
2
I
I
I
C
C
C
– V
– V
– V
2
3
4
CE
CE
GE
70
3
3
4
2.7
GE
Common emitter
V CE = 5 V
Common emitter
Ta = 70°C
Common emitter
Ta = −40°C
3
(V)
V GE = 2 V
V GE = 2 V
4
4
2.7
3
2.5
2.3
2.5
2.3
5
5
4
4
200
160
120
1.6
1.2
0.8
0.4
80
40
−50
−50
0
5
4
3
2
1
0
0
0
Collector-emitter voltage V CE (V)
1
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
0
0
V
V
GE(OFF)
2
CE(sat)
I
C
– V
50
50
4
CE
– Ta
3
– Ta
3
Common emitter
V CE = 5 V
I C = 1 mA
Common emitter
V GE = 2.5 V
Common emitter
Ta = 25°C
100
100
I C = 150 A
V GE = 2 V
4
GT8G134
2007-07-23
120
90
60
2.7
2.5
2.3
150
150
5