GT8G134 TOSHIBA Semiconductor CORPORATION, GT8G134 Datasheet - Page 3

• Manufacturer Part Number: GT8G134
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Caution on handling
Caution in design
●waveform
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
You should be design dV/dt value under Icp=150A is below 400 V/μs when IGBT turn off under Ta=70℃ .
You should be design to don’t flow collector current through terminal number 3 .
●definition of dv/dt
●Gate drive connection
The slope of V
0V, 0A
I
V
C(begin)
CE
dv/dt = (90V-30V) / (⊿t)
= 60V / ⊿t
CE
5,6,7,8
1,2
from 30v to 90v (attached figure.1)
I
C
4
3
I
C
(end)
dv/dt period
3
R
GE
R
●waveform (expansion)
G
30V
driver
90V
⊿t
GT8G134
2007-07-23
V
CE