HSC276 Renesas Electronics Corporation., HSC276 Datasheet - Page 2
HSC276
Manufacturer Part Number
HSC276
Description
Silicon Schottky Barrier Diode For Detector And Mixer
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HSC276.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HSC276A1TRF-E
Manufacturer:
IR
Quantity:
12 000
HSC276
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Electrical Characteristics
(Ta = 25°C)
Item
Reverse voltage
Reverse current
Forward current
Capacitance
ESD-Capability
Note:
Rev.2.00, Nov.10.2003, page 2 of 4
1. Failure criterion ; I
*1
Symbol
V
I
I
C
—
R
F
R
R
≥ 100 µA at V
Min
3
—
35
—
30
R
Typ
—
—
—
—
—
= 0.5 V
Symbol
V
I
Tj
Tstg
O
R
Max
—
50
—
0.85
—
Unit
V
µA
mA
pF
V
Value
3
30
125
–55 to +125
Test Condition
I
V
V
V
C = 200 pF, R = 0 Ω , Both forward and
reverse direction 1 pulse.
R
R
F
R
= 1 mA
= 0.5 V
= 0.5 V
= 0.5 V, f = 1 MHz
Unit
°C
°C
V
mA