HSC276 Renesas Electronics Corporation., HSC276 Datasheet
HSC276
Available stocks
Related parts for HSC276
HSC276 Summary of contents
Page 1
... Silicon Schottky Barrier Diode for Detector and Mixer Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Pin Arrangement 1 Rev.2.00, Nov.10.2003, page Laser Mark C2 Cathode mark ...
Page 2
... HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Symbol Reverse voltage V R Reverse current I R Forward current I F Capacitance C *1 ESD-Capability — ≥ 100 µ Note: 1. Failure criterion ; I R Rev ...
Page 3
... HSC276 Main Characteristics –1 10 –2 10 – 75˚ 25˚C –4 10 – 0.2 0.4 0.6 Forward voltage V F Fig.1 Forward current vs. Forward voltage 10 1.0 0.1 0.1 1.0 Reverse voltage V R Fig.3 Capacitance vs. Reverse voltage Rev.2.00, Nov.10.2003, page –2 10 – 75˚C – 25˚C –5 10 – ...
Page 4
... HSC276 Package Dimensions 1.6 ± 0.10 Rev.2.00, Nov.10.2003, page 1.2 ± 0.10 Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm UFP — Conforms 0.0016 g ...
Page 5
Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...