SUF2001 AUK Co., Ltd., SUF2001 Datasheet - Page 4

• Manufacturer Part Number: SUF2001
• Description: Dual N And P-channel Trench Mosfet
• Manufacturer: AUK Co., Ltd.

P-CH Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Note ;
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source current
Source current(Plused)
Forward voltage
Reverse recovery time
Reverse recovery charge
⑤ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥ L=2.0mH, I
⑦ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
⑧ Essentially independent of operating temperature
Characteristic
Characteristic
AS
=-5.0A, V
DD
=-15V, R
⑧
⑧
⑤
G
=25Ω
Symbol
Symbol
R
V
BV
Coss
t
t
Crss
Ciss
DS(ON)
I
I
Q
V
GS(th)
d(off)
Q
d(on)
I
Q
g
Q
DSS
GSS
I
t
t
t
SM
SD
rr
DSS
gd
S
fs
gs
r
f
rr
g
KSD-T7F002-000
I
I
V
V
V
V
V
V
f=1MHz
V
R
V
I
Integral reverse diode
in the MOSFET
V
I
di
D
D
D
s
DS
DS
GS
GS
DS
GS
DD
G
DD
GS
=-1.5A
S
=250µA, V
=250µA, V
=-5.3A
=10Ω
/dt=100A/us
=-30V, V
=0V, V
=-10V, I
=-5.0V, I
=-5V, I
=0V, V
=0V, I
=-15V, I
=-15V, V
Test Condition
Test Condition
S
GS
DD
D
=-1.5A
=-5.3A
D
D
=±20V
=-10V,
GS
GS
D
GS
DS
=-2.7A
=-5.3A
=-2.7A
=0V
=-5V
=0
=V
GS
⑦
⑦
⑧
⑧
Min.
Min
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ
0.5
390
1.2
1.1
2.5
1.1
4.7
1.4
1.7
66
77
11
97
37
90
-
-
-
-
-
-
-
SUF2001
Max.
±100
Max
-3.0
590
150
-1.5
-6.0
-1.2
7.0
2.1
2.5
72
83
60
1
-
-
-
-
-
-
-
-
(Ta=25°C)
(Ta=25°C)
Unit
Unit
mΩ
mΩ
µA
nA
nC
pF
ns
uC
ns
V
V
S
A
V
4