SUF2001 AUK Co., Ltd., SUF2001 Datasheet - Page 3

• Manufacturer Part Number: SUF2001
• Description: Dual N And P-channel Trench Mosfet
• Manufacturer: AUK Co., Ltd.

N-CH Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Note ;
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source current
Source current(Plused)
Forward voltage
Reverse recovery time
Reverse recovery charge
① Repetitive Rating : Pulse width limited by maximum junction temperature
② L=3.4mH, I
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
Characteristic
Characteristic
AS
=5.8A, V
DD
=15V, R
G
④
④
①
=25Ω
Symbol
Symbol
R
V
BV
Coss
t
t
Crss
Ciss
DS(ON)
I
I
Q
V
GS(th)
d(off)
Q
d(on)
I
Q
g
Q
DSS
GSS
I
t
t
t
SM
SD
rr
DSS
gd
S
fs
gs
r
f
rr
g
KSD-T7F002-000
I
I
V
V
V
V
V
V
f=1MHz
V
R
V
I
Integral reverse diode
in the MOSFET
V
I
di
D
D
D
s
DS
DS
GS
GS
DS
GS
DD
G
DD
GS
=1.5A
S
=250µA, V
=250µA, V
=5.8A
=10Ω
/dt=100A/us
=30V, V
=0V, V
=10V, I
=5.0V, I
=5V, I
=0V, V
=0V, I
=15V, I
=15V, V
Test Condition
Test Condition
D
S
GS
DD
=1.5A
=5.8A
D
D
GS
GS
D
=2.9A
=±20V
=5.8A
=10V,
GS
DS
=2.9A
=0V
=5V
=0
= V
GS
③
③
④
④
Min.
1.0
Min
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ
0.5
370
1.2
1.1
2.5
1.1
4.2
0.9
1.4
24
28
12
60
36
90
-
-
-
-
-
-
-
SUF2001
Max
Max.
1.5
±100
6.0
1.2
560
3.0
6.3
1.4
2.1
30
34
90
54
-
-
1
-
-
-
-
-
-
(Ta=25°C)
(Ta=25°C)
Unit
Unit
mΩ
mΩ
uC
ns
µA
nA
nC
pF
ns
A
V
V
V
S
3