MP4211 TOSHIBA Semiconductor CORPORATION, MP4211 Datasheet - Page 6

• Manufacturer Part Number: MP4211
• Description: Power Mosfet Module Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

160
120
80
40
8
6
4
2
0
0
0
0
(4)
(3)
(2)
(1)
Total power dissipation P
40
Ambient temperature Ta (°C)
1
300
100
0.5
30
10
0.001
3
1
Curves should be applied in thermal
limited area.
(Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
ΔT
(1)
80
2
P
DT
ch
– P
– Ta
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
(2)
120
DT
0.01
3
Circuit board
DT
(3)
Circuit board
160
(W)
(4)
4
0.1
200
5
Pulse width t
r
th
– t
1
6
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
w
w
Peak I
V
DD
(s)
= −25 V, L = 14.84 mH
500
400
300
200
100
AR
0
25
−15 V
10
15 V
= −5 A, R
TEST CIRCUIT
Channel temperature T
50
G
(3)
(2)
Circuit board
= 25 Ω
100
75
E
(4)
(1)
AS
– T
Ε
AS
V
TEST WAVE FORM
ch
100
DD
1000
=
B
1
2
ch
VDSS
·L·I
I
AR
2
(°C)
·
125
⎛
⎜
⎜
⎝
B
VDSS
B
2006-10-27
V
VDSS
DS
MP4211
−
150
V
DD
⎞
⎟
⎟
⎠