MP4211 TOSHIBA Semiconductor CORPORATION, MP4211 Datasheet

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MP4211

Manufacturer Part Number
MP4211
Description
Power Mosfet Module Silicon P Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
Absolute Maximum Ratings
This transistor is an electrostatic-sensitive device. Please handle with caution.
4-V gate drivability
Small package by full molding (SIP 10 pin)
High drain power dissipation (4 devices operation)
: P
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
(1-device operation, Ta = 25°C)
Drain power dissipation
(- device operation, Ta = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche
energy
Channel temperature
Storage temperature range
Note 1: Condition for avalanche energy (single pulse) measurement
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note:
T
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L
= 4 W (Ta = 25°C)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
V
DD
(Note 2) 4-device
= −25 V, starting T
GS
= 20 kΩ)
I
DC
Pulse
1-device
operation
operation
GSS
DSS
th
= −0.8 to −2.0 V (V
(Note 1)
= ±10 μA (max) (V
= −100 μA (max) (V
ch
DS (ON)
(Ta = 25°C)
Symbol
= 25°C, L = 14.84 mH, R
V
V
V
E
fs
E
P
E
T
I
I
T
DGR
GSS
P
DSS
ART
I
DP
AR
| = 4.0 S (typ.)
DT
AS
AR
stg
D
ch
D
MP4211
= 0.16 Ω (typ.)
DS
GS
DS
= −10 V, I
= ±16 V)
−55 to 150
= −60 V)
Rating
−60
−60
±20
−20
273
150
2.0
4.0
0.2
0.4
−5
−5
1
D
= −1 mA)
G
= 25 Ω, I
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
AR
= −5 A
Weight: 2.1 g (typ.)
JEDEC
JEITA
TOSHIBA
Industrial Applications
2
-π-MOSV inOne)
2-25A1C
2006-10-27
MP4211
Unit: mm

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MP4211 Summary of contents

Page 1

... 4 273 − 0 0.4 ART T 150 ° −55 to 150 °C stg = 25° 14.84 mH Ω MP4211 2 -π-MOSV inOne) Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1C Weight: 2.1 g (typ.) = − 2006-10-27 ...

Page 2

... OUT ― 45 ― ≈ − ― 200 = 10 μs w ― − ― 16 ― 6 2006-10-27 MP4211 Max Unit ±10 μA μA ― Ω ― S ― pF ― pF ― pF ― ― ns ― ― ― nC ― nC ― ...

Page 3

... DSF − / A/μ Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 MP4211 Min Typ. Max Unit ― ― −5 A ― ― −20 A ― ― 1.7 V ― 80 ― ns ― ...

Page 4

... Gate-source voltage V 3 Common source Tc = 25°C 1 0.5 0.3 0.1 0.05 0.03 −30 −0.1 −0.3 4 MP4211 I – Common source Tc = 25°C −4 −3.5 −3 −2 −2 V −4 −6 −8 −10 ( – Common source Tc = 25° − ...

Page 5

... I D max −12 −3 −8 −1 *: Single nonrepetitive pulse Tc = 25°C −4 −0.3 Curves must be derated linearly with increase in temperature. 0 −0 −1 −3 5 MP4211 I – −3 − 0.4 0.8 1.2 1.6 2.0 Drain-source voltage V ( – Common source − − ...

Page 6

... Channel temperature −15 V TEST CIRCUIT Peak I = − − 14. MP4211 (4) (1) 100 1000 E – 100 125 150 (° VDSS TEST WAVE FORM = 25 Ω ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 MP4211 20070701-EN 2006-10-27 ...

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