SUR50N03-09P Vishay, SUR50N03-09P Datasheet - Page 3

• Manufacturer Part Number: SUR50N03-09P
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72181
S-32694—Rev. A, 19-Jan-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3000
2500
2000
1500
1000
100
500
2.0
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
C
GS
= 30 A
rss
5
= 10 V
10
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
10
25
− Drain Current (A)
Capacitance
20
50
C
C
15
iss
oss
75
30
100
20
T
C
125
= −55_C
40
125_C
25
25_C
150
175
New Product
50
30
0.05
0.04
0.03
0.02
0.01
0.00
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 30 A
T
On-Resistance vs. Drain Current
= 15 V
J
0.3
V
20
6
= 150_C
SD
Q
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
40
12
0.6
V
GS
SUR50N03-09P
Vishay Siliconix
= 4.5 V
60
18
0.9
T
J
V
= 25_C
GS
www.vishay.com
80
24
1.2
= 10 V
100
30
1.5
3