SUR50N03-09P Vishay, SUR50N03-09P Datasheet

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SUR50N03-09P

Manufacturer Part Number
SUR50N03-09P
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes
a.
b.
Document Number: 72181
S-32694—Rev. A, 19-Jan-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t v 10 sec.
Based on maximum allowable junction temperature, package limitation current is 25 A.
DS
30
30
(V)
Reverse Lead DPAK
Ordering Information:
SUR50N03-09P—E3
SUR50N03-09P-T4—E3 (altrenate tape orientation)
G
TO-252
Top View
D
S
0.0095 @ V
0.014 @ V
a
a
r
DS(on)
Drain Connected to Tab
Parameter
Parameter
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
New Product
63
52
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
b
b
T
T
t v 10 sec
T
T
C
A
C
C
A
b
= 100_C
= 25_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
D 100% R
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
stg
− Desktop CPU Core
g
Typical
Tested
1.8
16
40
−55 to 175
Limit
SUR50N03-09P
44.5
"20
65.2
7.5
63
30
21
50
10
35
61
Vishay Siliconix
b
a
b
Maximum
2.3
20
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
A
1

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SUR50N03-09P Summary of contents

Page 1

... Reverse Lead DPAK Drain Connected to Tab Top View Ordering Information: SUR50N03-09P—E3 SUR50N03-09P-T4—E3 (altrenate tape orientation) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current ...

Page 2

... SUR50N03-09P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... Junction Temperature (_C) J Document Number: 72181 S-32694—Rev. A, 19-Jan-04 New Product 0.05 0. −55_C C 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUR50N03-09P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUR50N03-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 1000 100 10 1 0.1 0.01 125 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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