CEF02N6A Chino-Excel Technology Co., Ltd., CEF02N6A Datasheet - Page 3

• Manufacturer Part Number: CEF02N6A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

300
250
200
150
100
1.8
1.5
1.2
0.9
0.6
0.3
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
0
0
-50
0.0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
3
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
25
6
10
V
50
GS
9
=10,8,7V
75
15
12
C iss
C oss
C rss
100
20
15
125
CEP02N6A/CEB02N6A
150
18
25
3
10
10
10
2.4
2.0
1.6
1.2
0.8
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0
-1
-2
Figure 6. Body Diode Forward Voltage
-100
0.2
1
V
Figure 4. On-Resistance Variation
SD
I
V
Figure 2. Transfer Characteristics
D
GS
Variation with Source Current
=0.7A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
2
, Junction Temperature( C)
0.6
CEF02N6A
T
, Gate-to-Source Voltage (V)
J
=125 C
with Temperature
0
3
1.0
50
25 C
4
1.4
100
5
-55 C
1.8
150
6
200
2.2
7