CEM4308 Chino-Excel Technology Co., Ltd., CEM4308 Datasheet

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CEM4308

Manufacturer Part Number
CEM4308
Description
Dual N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM4308
Manufacturer:
CET
Quantity:
20 000
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
Lead free product is acquired.
40V, 5.8A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
DS(ON)
DS(ON)
Parameter
Parameter
= 38m
= 50m
a
@V
@V
GS
GS
= 10V.
= 4.5V.
b
SO-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
D
D
JA
stg
-55 to 150
D
S
8
1
Limit
Limit
1
62.5
1
5.8
2.5
40
23
CEM4308
20
D
G
7
2
1
1
http://www.cetsemi.com
D
6
S
3
2
2
Rev 1.
D
G
5
4
2
2
Units
Units
2006.Sep
C/W
W
V
V
A
A
C
5

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CEM4308 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . = 10V. = 4.5V. . DS(ON) SO unless otherwise noted A Symbol stg Symbol CEM4308 Limit Units ...

Page 2

... 10V GEN t d(off 20V CEM4308 Min Typ Max Units µ 100 -100 685 pF 115 ...

Page 3

... Figure 5. Gate Threshold Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 25 -100 125 150 Figure 6. Body Diode Forward Voltage 3 CEM4308 =125 C - Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =5. =10V GS - 100 150 T , Junction Temperature Figure 4 ...

Page 4

... d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 10. Switching Waveforms - CEM4308 Limit 1ms 10ms 100ms Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area t off t r d(off 90% INVERTED 10% 90% 50% ...

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