FSS101 Sanyo Semiconductor Corporation, FSS101 Datasheet - Page 3

• Manufacturer Part Number: FSS101
• Description: P-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

10000
1000
1000
140
120
100
100
100
2.4
2.0
1.8
1.6
1.2
0.8
0.4
10
80
60
40
20
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
-60
0
0
7
-0.1
-40
-2
20
-20
2
-4
Drain-to-Source Voltage, V
Ciss,Coss,Crss - V DS
Ambient Temperature, Ta – ˚C
Ambient Temperature, Ta – ˚C
40
3
0
-6
R DS(on) - Ta
SW Time - I D
Drain Current, I
5
20
60
P D - Ta
-8
7
40
t d(on)
-1.0
-10
80
60
-12
D
2
100
80
– A
3
DS
-14
100
120
– V
5
-16
120
V
V
7 -10
DD
GS
f = 1MHz
140
=–4V
-18
=–10V
140
Ciss
FSS101
160
-20
160
2
-0.01
-0.01
-1.0
-0.1
-1.0
-0.1
-10
-10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
-0.1
0
0
I DP = - 3 2 A
V GS = 0
Ta=25 C
1 Pulse
V
I
Mounted on a ceramic board (1200mm
D
DS
Operation in this area
is limited by R DS (on).
=–5A
=–10V
2
-0.2
5
3
Drain-to-Source Voltage, V
Diode Forward Voltage, V
Total Gate Charge, Qg – nC
-0.4
I D =- 5 A
5
10
7
V GS - Q g
I F - V SD
-1.0
-0.6
A S O
15
2
-0.8
3
20
SD
DS
5
-1.0
– V
– V
7
-10
25
-1.2
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