FSS162 Sanyo Semiconductor Corporation, FSS162 Datasheet

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FSS162

Manufacturer Part Number
FSS162
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSS162
Manufacturer:
SANYO/三洋
Quantity:
20 000
Part Number:
FSS162-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENA0348
FSS162
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : S162
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10s)
Drain Current (PW 10 s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
I D
SANYO Semiconductors
Duty cycle 1%
Duty cycle 1%
Mounted on a ceramic board (1200mm
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -8A
I D =--8A, V GS =- -10V
I D =--4A, V GS =- -4.5V
I D =--4A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
FSS162
Conditions
Conditions
2
0.8mm), PW 10s
71206 / 40506PA MS IM TB-00002255
DATA SHEET
min
--1.0
--30
9
Ratings
typ
2500
Ratings
460
370
15
18
26
30
Continued on next page.
--55 to +150
max
150
--2.4
--30
--10
--52
2.4
20
--8
24
37
43
No. A0348-1/4
10
--1
Unit
Unit
m
m
m
pF
pF
pF
W
V
V
A
A
A
V
V
S
C
C
A
A

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FSS162 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS162 SANYO Semiconductors Symbol Conditions ...

Page 2

... --10V --10 --8 --6 --4 --2 0 --0.7 --0.8 --0.9 --1.0 0 IT10765 Ratings min typ max 28 180 140 100 --0.83 --1 --15V 0V --10V -- =1. OUT PW= FSS162 P --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage No. A0348-2/4 Unit --3.0 --3.5 IT10766 ...

Page 3

... Drain Current -- --10V -- --8A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FSS162 50 Ta= --12 --14 --16 --60 --40 IT10767 = 10V -- --1 --0 ...

Page 4

... Ambient Temperature Note on usage : Since the FSS162 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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