FSS802 Sanyo Semiconductor Corporation, FSS802 Datasheet - Page 2

• Manufacturer Part Number: FSS802
• Description: N-channel Silicon Mosfets
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
2116
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
10
50
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
0
0
8
1
1.27
I D =6A
0.1
Parameter
5.0
2
0.43
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
12A
4
4
5
0.3
R DS (on) -- V GS
6
I D -- V DS
0.4
0.5
8
0.6
10
Symbol
0.2
V SD
Qgs
Qgd
Qg
0.7
12
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
0.8
Ta=25 C
V DS =10V, V GS =10V, I D =12A
V DS =10V, V GS =10V, I D =12A
V DS =10V, V GS =10V, I D =12A
I S =12A, V GS =0
14
0.9
IT04075
IT04077
1.0
16
FSS802
Conditions
Switching Time Test Circuit
18
16
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
--60
0
V DS =10V
--40
0.5
--20
10V
P.G
0V
PW=10 s
D.C. 1%
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
V IN
1.0
0
min
R DS (on) -- Ta
20
I D -- V GS
V IN
1.5
40
50
G
Ratings
typ
0.81
60
2.0
33
5
6
V DD =15V
80
D
max
2.5
100
S
R L =1.25
I D =12A
1.2
120
No.8044-2/4
FSS802
3.0
V OUT
140
IT04076
IT04078
Unit
nC
nC
nC
V
160
3.5